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FUJITSU SEMICONDUCTOR DATA SHEET
DS04-71102-1E
ASSP for Power Supply Applications
Evaluation Board
MB39A102
s DESCRIPTION
The MB39A102 evaluation board is a surface mount circuit board with four channels of up conversion, down conversion and up/down conversion circuits. The internal structure consists of one channel of step-down type, two channels of transformer type, and one channel of Sepic type. A total of seven lines of output terminals are provided, supporting voltage settings from -7 V to +15 V and supplying a current Max 500 mA (Sepic type) at a power-supply voltage between +2.5 V and +6 V. The output circuit (ch1) can be changed to the Zata type by optional replacement of components. The board incorporates the protective functions that upon detection of a short circuit or activation of the under voltage lockout protection circuit, the short-circuit protection feature shuts off transistors to stop the output. Also, the short-circuit detection comparator can detect a short circuit through an external input (initial number P12). In addition, each channel can be controlled to be turned on and off and can be set for a soft-start.
s EVALUATION BOARD SPECIFICATIONS
Terminal Input voltage Oscillation frequency VIN Vo-1 Vo-2-1 Vo-2-2 Output voltage Vo-2-3 Vo-3-1 Vo-3-2 Vo-4 Min 2.5 400 2.2 13 4.5 -8.3 13 4.5 2.9 Typ 3.6 500 2.5 15 5 -7.5 15 5 3.3 Max 6 600 2.8 17 5.5 -6.7 17 5.5 3.7 V Unit V kHz
(Continued)
MB39A102
(Continued)
Terminal Vo-1 Vo-2-1 Vo-2-2 Output current Vo-2-3 Vo-3-1 Vo-3-2 Vo-4 Short-circuit detection time Soft-start time Min 4.6 7.6 Typ 7 10.3 Max 250 10 50 -5 10 50 500 12.5 15.8 ms ms mA Unit
s TERMINAL DESCRIPTION
Symbol VIN VoX CTL GNDX ICGND Function Power-supply terminal VIN = 2.5 V to 6.0 V (Typ: 3.6 V) DC/DC converter output terminal Power-supply control terminal VCTL = 0 V to 0.8 V : Standby mode VCTL = 2.0 V to VIN : Operation mode DC/DC converter GND terminal MB39A102 GND terminal
s SWITCH DESCRIPTION
SW 1 2 3 4 5 NAME CS1 CS2 CS3 CS4 CTL FUNCTION CH1 control CH2 control CH3 control CH4 control Power supply control ON Output ON Output ON Output ON Output ON Operation mode OFF Output OFF Output OFF Output OFF Output OFF Standby mode
2
MB39A102
s SETUP AND CHECKUP
(1) Setup * Connect the power-supply terminal side to VIN and GND. Connect the Vo side to the required loading device or measuring instrument. * Connect a startup power supply from 2.0 V to VIN to the CTL terminal. (This can be done by connection from VIN.) * Set SW5 (CTL) to OFF (Standby mode) and SW1 through SW4 (CS1 through CS4) to OFF (output off).
(2) Checkup * Turn on VIN (power supply), set SW5 to ON (Operation mode) and SW1 through SW4 to ON (output on). The IC works normally with the following outputs: Vo1 = 2.5 V (Typ) , Vo2-1 = 15 V (Typ) , Vo2-2 = 5 V (Typ) , Vo2-3 = -7.5 V (Typ) , Vo3-1 = 15 V (Typ) , Vo3-2 = 5 V (Typ) , Vo4 = 3.3 V (Typ)
3
MB39A102
s COMPONENT LAYOUT
* On-board Component Layout
MB39A102 EV BOARD
L2 VO1 C6 GND1 C11 C10 R5 C8 P2 R1 C9 D2 VO2-1 D6 C15 C31 R9 C13 P3 D5 C14 GND GND3 Q5 OFF
3 4 1
C3 R4 R3
Q1
P1 C5
C4 D1 L1
T1 D4
Q2 D3
ICGND
R19 C23
R21 P6 R20
R22 R23
P5
C22 C20
R14 R15
R16 R17
R13 C21
P9 P10 P11
R10 C12
Q4
VIN
SW1
ON
C16 R12 C18 D7 VO4 C17 L3 P4 L4 C19 GND4
CTL
2
ON R11
6
OFF
5
REV. 2. 0
Note : Only C1 and C2 parts are set on the rear surface.
(Continued)
4
VO3-1
VO3-2
R26 R27 P7
R32 P8 R33
R31
C29 C28 R29 C25 R25
15
16
R36
R35 R34
P12
1
R30 R28
C24 C26
C27 T2
GND2
R24 R2 C30 R37
30
1
M1
R18
VO2-2
C7 R6
1
VO2-3
MB39A102
(Continued)
Top side
Inside VIN & GND (Layer2)
Inside GND (Layer3)
Bottom Side
5
MB39A102
s CONNECTION DIAGRAM
A
P5
R13 R14
3.3 k 12 k
-INE1
15 k
29
Offset voltage10 mV
VREF Error - Amp1 + + 1.24 V
L priority
VCCO
CH1
Drive1 Pch
26
R15 C20
CS1 12 A
C1
0.1 F
0
R1 R3
0
0
P1 Q1
MCH3309
A
L2
22 H
30
R16
0.047 F
a
0.1 F
C21 2 k FB1
PWM + Comp1 + -
C5
0
VO1 2.5 V IO1 = 250 mA
25
OUT1 R4 C4
1 F
L priority
28
Offset voltage10 mV
VREF
L priority
R17
0
R19 R20
DTC1 27 R18
XXX
IO = 130 mA at VCCO = 4 V
C3 XXX
L1 D1 XXX SBS004
C6
4.7 F
GND1
VO2-1 15 V IO2-1 = 10 mA
B
P6
-INE2
2.4 k 43 k
2
1
R21 15 k CS2 12 A C22 R22 C23 2 k FB2
Error - Amp2 + + 1.24 V
CH2
Drive2 Pch OUT2
P2 Q2 R5 MCH3309
0
B
D2 T1 D3
SB05-05CP
b
0.1 F
PWM +Comp2 + -
2.2 F
C9
VO2-2 5V IO2-2 = 50 mA VO2-3 -7.5 V IO2-3 = -5 mA
24
1 F
R6
SB05-05CP
L priority
0
0.047 F
3
Offset voltage10 mV
VREF Error - Amp3 + + 1.24 V
L priority
R23
33 k
C
P7 VIN (2.5 V to 6V)
R25 R26
24 k 43 k
20 k
DTC2 4 R24 -INE3
IO = 130 mA at VCCO = 4 V
C8
C7 XXX
D4
2.2 F
SB05-05CP
C10
C11
2.2 F
14
CS3 12 A
CH3
Drive3 Pch OUT3 P3 R9 MCH3309 Q4
R27
15 k
C24
15
R28 C25
2 k
c
0.1 F
PWM +Comp3 + -
Using same transformer
GND2
VO3-1 15 V IO3-1 = 10 mA
23
C
D5
SB05-05CP
0.047 F
FB3
L priority
13
Offset voltage10 mV
VREF Error - Amp4 + + 1.24 V
L priority
0
C31 XXX
R29
3.3 k
GND
P8
D
R31 R32
3 k 22 k
DTC3 12 R30 20 k -INE4
IO = 130 mA at VCCO = 4 V
R10 0
C13
D6
2.2 F
C14
SB05-05CP
C15 T2 P4
2.2 F
17
15 k
CH4
Drive4 Nch OUT4
R33
CS4 12 A
C26
16
0.1 F
d
0.1 F
C27 1 k FB4
R34
PWM +Comp4 + -
1 F
C12 XXX
VO3-2 5V IO3-2 = 50 mA
22
GND0
L priority
D
18
19
100 k VREF SCP - Comp
21
IO = 130 mA at VCCO = 4 V
H at SCP ErrorAmp Power Supply SCPComp Power Supply ErrorAmp Reference 1.24 V
R11
L3
C18
GND3 VO4 3.3 V IO4 = 500 mA
R35
30 k
DTC4 R36
18 k
0 R12 180
C16
10 H 4.7 F D7 SBS004
15 F
L4
P12
-INS
10 F
C19
P9
Short-circuit detection signal (L : at short) Charge current CSCP 1 A
20
1V
+
SCP
H :UVLO release
4700 PF
C17
1 F
Q5
CPH3206
11
UVLO OSC
0.9 V 0.4 V 2.0 V
CT
Accuracy 10% 1.5 MHz Correspondence
VCC
C28
0.01 F
5
0.1 F
R2 0
GND4
bias
C2
VREF
VR1ON/OFF 6
CTL
Power
CTL*
e
RT
24 k
8
P10
9
7
Accuracy 1%
R37
C29
100 pF
P11
VREF
Accuracy 1%
10
GND
IC GND
C30
0.1 F
* : H : ON (Power ON) L : OFF (At standby) VTH = 1.4 V
OFF OFF OFF OFF ON
Note : Fixed value of not mounted parts is described by XXX.
SW1 ON CS1 OPEN ON CS2 OPEN ON CS3 OPEN ON CS4 OPEN OFF CTL
a b c
d e
IC is operating, and all channels are ON state in above diagram.
123456
6
MB39A102
s PARTS LIST
No Sym Part bol name IC Model name
MB39A102 PFT
Specification
Rating 1 Rating 2 Rating 3 Val- Deviaue tion Features
Package
Manufacturer
Note
1 M1 2 Q1 3 Q2 4 Q4 5 Q5 6 D1 7 D2 8 D3 9 D4 10 D5 11 D6 12 D7 13 L1 14 L2 15 L3 16 L4 17 T1 18 T2 19 C1
PD = 0.9 W PD = 0.9 W PD = 0.9 W PC = 0.9 W

RDC = 0.13 RDC = 0.067 RDC = 0.097
FPTFUJITSU 30P-M04
Pch FET MCH3309 Pch FET MCH3309 Pch FET MCH3309
VGSS = 10 V ID = 1.5 A VGSS = 10 V ID = 1.5 A VGSS = 10 V ID = 1.5 A VCEO = 15 V IC = 3.0 A

SC-62
SANYO SANYO SANYO SANYO
NPN SBD SBD SBD SBD SBD SBD SBD Coil Coil Coil Coil
Transformer Transformer
CPH3206 SBS004 SB0505CP SB0505CP SB0505CP SB0505CP SB0505CP SBS004
IF(AV) = 1.0 A VRRM = 15 V IF(AV) = 0.5 A VRRM = 50 V IF(AV) = 0.5 A VRRM = 50 V IF(AV) = 0.5 A VRRM = 50 V IF(AV) = 0.5 A VRRM = 50 V IF(AV) = 0.5 A VRRM = 50 V IF(AV) = 1.0 A VRRM = 15 V

SOT-23 SANYO SOT-23 SANYO SOT-23 SANYO SOT-23 SANYO SOT-23 SANYO SOT-23 SANYO SOT-23 SANYO
1608
TDK TDK TDK SUMIDA SUMIDA
Not mounted
RLF5018TIDC1 = 0.63 A IDC2 = 0.86 A 220MR63 RLF5018TIDC1 = 0.94 A IDC2 = 1.3 A 100MR94 RLF5018TIDC1 = 0.76 A IDC2 = 1.0 A 150MR76 CLQ52 5388-T095 CLQ52 5388-T095
22 20% 10 20% 15 20%
50 V

Temperature characteristics B Temperature characteristics B
Ceramic C1608JB1 condensH104K er Ceramic C1608JB1 condensH104K er Ceramic condenser
0.1 10%
TDK
20 C2
50 V 25 V 1/4 W
0.1 10%
1608 3216 3216
TDK
Not mounted
21 C3

Temperature characteristics B
TDK
22 C4 23 C5
Ceramic C3216JB1 condensE105K er
1 10% 0
Max 50 m
Jumper
(Continued)
7
MB39A102
Sym Part No bol name 24 C6 25 C7 26 C8 27 C9 28 C10 29 C11 30 C12 31 C13 32 C14 33 C15 34 C16 35 C17 36 C18 37 C19 38 C20 39 C21 40 C22 41 C23 42 C24 43 C25 44 C26 45 C27
Model name
Specification
Rating 1 Rating 2 Rating 3 Value Deviation Features
Temperature characteristics B
Pack- Manuage facturer Note
Ceramic C3216JB1 condenser A475M Ceramic condenser
10 V 25 V 16 V 16 V 16 V 25 V 16 V 16 V 50 V 25 V 10 V 6.3 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V

4.7 10% 1 10%
3216 3216 3216 3216 3216 3216 3216 3216 1608 3216 3216 3216 1608 1608 1608 1608 1608 1608 1608 1608
TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK
Not mounted Not mounted
Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B
Ceramic C3216JB1 condenser E105K Ceramic C3216JB1 condenser C225K Ceramic C3216JB1 condenser C225K Ceramic C3216JB1 condenser C225K Ceramic condenser
2.2 10% 2.2 10% 2.2 10% 1 10%
Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B Temperature characteristics B
Ceramic C3216JB1 condenser E105K Ceramic C3216JB1 condenser C225K Ceramic C3216JB1 condenser C225K Ceramic C1608JB1 condenser H472K Ceramic C3216JB1 condenser E105K Ceramic C3216JB1 condenser A475M Ceramic C3216JB1 condenser A106M Ceramic C1608JB1 condenser H104K Ceramic C1608JB1 condenser H473K Ceramic C1608JB1 condenser H104K Ceramic C1608JB1 condenser H473K Ceramic C1608JB1 condenser H104K Ceramic C1608JB1 condenser H473K Ceramic C1608JB1 condenser H104K Ceramic C1608JB1 condenser H104K
2.2 10% 2.2 10% 4700 P 10% 1.0 10% 4.7 10% 10 10% 0.1 10% 0.047 10% 0.1 10% 0.047 10% 0.1 10% 0.047 10% 0.1 10% 0.1 10%
(Continued)
8
MB39A102
Sym Part No bol name 46 C28 47 C29 48 C30 49 C31 50 R1 51 R2 52 R3 53 R4 54 R5 55 R6 56 R9
Model name
Specification
Rating 1 Rating 2 Rating 3 Value Deviation Features
Temperature characteristics B Temperature characteristics B Temperature characteristics B
ManuPackage facturer Note
Ceramic C1608JB1 condenser H103K Ceramic C1608CH1 condenser H101J Ceramic C1608JB1 condenser H104K Ceramic condenser
50 V 50 V 50 V 1/16 W 1/16 W 1/4 W 1/16 W 1/4 W 1/16 W 1/4 W 1/16 W 1/4 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W

0.01 10% 100 p 5%
1608 1608 1608 1608 1608 3216 1608 3216 1608 3216 1608 3216 1608 1608 1608 1608 1608 1608 1608
TDK TDK TDK ssm ssm ssm ssm ssm ssm
Not mounted Not mounted
0.1 10% 0 0 0 0 0 0 0 0 0 Max 50 m Max 50 m Max 50 m Max 50 m Max 50 m Max 50 m Max 50 m Max 50 m Max 50 m

RR0816P181-D RR0816P332-D RR0816P123-D RR0816P153-D RR0816P202-D

Jumper Jumper Jumper Jumper Jumper Jumper Jumper
57 R10 Jumper 58 R11 Jumper 59 R12 Resistor 60 R13 Resistor 61 R14 Resistor 62 R15 Resistor 63 R16 Resistor 64 R17 Jumper 65 R18 Resistor 66 R19 Resistor
180 0.5% 25 ppm/ C 3.3 k 0.5% 25 ppm/ C 12 k 0.5% 25 ppm/ C 15 k 0.5% 25 ppm/ C 2.0 k 0.5% 25 ppm/ C 0 Max 50 m

RR0816P242-D
2.4 k 0.5% 25 ppm/ C
(Continued)
9
MB39A102
(Continued)
No Sym Part bol name Model name
RR0816P433-D RR0816P153-D RR0816P202-D RR0816P333-D RR0816P203-D RR0816P242-D RR0816P433-D RR0816P153-D RR0816P202-D RR0816P333-D RR0816P203-D RR0816P302-D RR0816P223-D RR0816P153-D RR0816P102-D RR0816P303-D RR0816P183-D RR0816P243-D DMS-6H
Specification
Rating 1 Rating 2 Rating 3 Value Deviation Features
ManuPackage facturer Note
67 R20 Resistor 68 R21 Resistor 69 R22 Resistor 70 R23 Resistor 71 R24 Resistor 72 R25 Resistor 73 R26 Resistor 74 R27 Resistor 75 R28 Resistor 76 R29 Resistor 77 R30 Resistor 78 R31 Resistor 79 R32 Resistor 80 R33 Resistor 81 R34 Resistor 82 R35 Resistor 83 R36 Resistor 84 R37 Resistor 85 SW1 Switch 86 PIN
1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W 1/16 W

43 k 0.5% 25 ppm/ C 15 k 0.5% 25 ppm/ C 2.0 k 0.5% 25 ppm/ C 33 k 0.5% 25 ppm/ C 20 k 0.5% 25 ppm/ C 2.4 k 0.5% 25 ppm/ C 43 k 0.5% 25 ppm/ C 15 k 0.5% 25 ppm/ C 2.0 k 0.5% 25 ppm/ C 33 k 0.5% 25 ppm/ C 20 k 0.5% 25 ppm/ C 3.0 k 0.5% 25 ppm/ C 22 k 0.5% 25 ppm/ C 15 k 0.5% 25 ppm/ C 1.0 k 0.5% 25 ppm/ C 30 k 0.5% 25 ppm/ C 18 k 0.5% 25 ppm/ C 24 k 0.5% 25 ppm/ C
1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608
ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm
MATSUKYU MacEight

Terminal WT-2-1 pins
SANYO TDK SUMIDA ssm MATSUKYU MacEight
: : : : : :
SANYO Electric Co., Ltd. TDK Corporation Sumida Corporation SUSUMU CO., LTD. Matsukyu Co., Ltd. MacEight Co., Ltd.
10
MB39A102
s INITIAL SETTINGS
(1) Output voltage CH1 : Vol (V) = 1.24/R15x (R13+R14+R15) = 2.5 (V) : CH2 : Vo2-2 (V) = 1.24/R21x (R19+R20+R21) = 5.0 (V) : CH3 : Vo3-2 (V) = 1.24/R27x (R25+R26+R27) = 5.0 (V) : CH4 : Vo4 (V) = 1.24/R33x (R31+R32+R33) = 3.3 (V) : (2) Oscillation frequency fosc (kHz) = 1200000/ (C29 (pF) x R37 (k) ) = 500 (kHz) : (3) Soft-start time CH1 : ts (s) = 0.103xC20 (F) = 10.3 (ms) : CH2 : ts (s) = 0.103xC22 (F) = 10.3 (ms) : CH3 : ts (s) = 0.103xC24 (F) = 10.3 (ms) : CH4 : ts (s) = 0.103xC26 (F) = 10.3 (ms) : (4) Short-circuit detection time tscp (s) = 0.70xC28 (F) = 7.0 (ms) :
11
MB39A102
s REFERENCE DATA
* Conversion efficiency Input voltage * TOTAL efficiency
100 95
TOTAL efficiency (%) %
90 85 80 75 70 65 60 2.0
At VIN = 2.59 V : CH1 stops by short-circuit detection operation
VO1 = 2.5 V, IO1 = 250 mA VO2-1 = 15 V, IO2-1 = 10 mA VO2-2 = 5 V, IO2-2 = 50 mA VO2-3 = -7.5 V, IO2-3 = -5 mA VO3-1 = 15 V, IO3-1 = 10 mA VO3-2 = 5 V, IO3-2 = 50 mA VO4 = 3.3 V, IO4 = 500 mA fOSC = 500 kHz 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Input voltage VIN (V)
* Each CH Efficiency
100 95
Each CH efficiency (%) %
90
CH1
85
CH4
80 75 70 65 60 2.0
CH2 CH3
Notes: Only concerned CH is ON Include external SW Tr operating current CH2 and CH3 are discontinuous mode.
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Input voltage VIN (V)
12
MB39A102
* Load Reguration (VIN = 3.6 V) * CH1
5
DC/DC converter output voltage (V)
4
3
2
Setting VO1 = 2.5 V
1
0
0
50
100
150
200
250
300
Load current IO (mA)
* CH2, CH3
7
DC/DC converter output voltage (V)
6
Setting VO3-2 = 5 V
5
Setting VO2-2 = 5 V
4
3
Note : CH of using transformer only uses feedback control output. VO2-1, VO3-1 : IO = 10 mA Fix VO2-3 : IO = -5 mA Fix
0 10 20 30 40 50
2
Load current IO (mA)
13
MB39A102
* CH4
5
DC/DC converter output voltage (V)
4
Setting VO4 = 3.3 V
3
2
1
0
0
100
200
300
400
500
Load current IO (mA)
14
MB39A102
* Line Regulation * Output is a feedback control.
6
DC/DC converter output voltage (V)
Setting VO2-2 = 5 V
5
Setting VO3-2 = 5 V
4
Setting VO4 = 3.3 V
3
Setting VO1 = 2.5 V
2
1 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Input voltage VIN (V)
* Output is a feedback control none.
17
DC/DC converter output voltage (V)
16
Setting VO3-1 = 15 V Setting VO2-1 = 15 V
15
14
13
12
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Input voltage VIN (V)
(Continued)
15
MB39A102
(Continued)
* Output is a feedback control none.
-5
DC/DC converter output voltage (V)
-6
-7
Setting VO2-3 = -7.5 V
-8
-9
-10
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Input voltage VIN (V)
16
MB39A102
s COMPONENT SELECTION METHODS
1. Board view
Schottky Barrier Diode Output smoothing condenser Transformer
L2 C3 R4
0
P-ch MOS FET
Inductor (L2)
MB39A102 EV BOARD
Q1
P1 C5
220
000 000
R3 C4
Vo1
C6
CH1
GND1 Vo2-3
D1 L1
T1 D4
C11
CH2
Vo2-2
C7
ES1
Q2
0
1
R21 R20 R22 R23 R24 R2 C30
P6
P5
R14 R15
123 153 202 0
332
R13
R6
D3 C10 D2 P2 C9
R19
242
433 202 333 203 0
000
C21 R5 C8
0
ICGND
C23
C22 M1
C20 30
R16 R17 R18
P11
R1
Output smoothing condenser Schottky Barrier Diode
CH3
P10
C28 15 R29 C25 R25
242 333 203 202 433 153
R36 16 R35 R34 R32 P8
183 303 102
P9
R30 R28 R26 R27
C27 P12 R31
302
223 153
R33
R10 C12
0
Q4 C15
VIN
000
R9 C31 C13 P3 D5
Vo3-1
Vo3-2
P7
1
C24
C26
T2 D6
GND2
C29
243
R37
Vo2-1
MB39A102 0140 401 ES
C14 GND
SW1
1
Q5 C16 R12
181
ON
2
OFF 3
GND3
Output smoothing condenser
1 2 3 4
4
CTL
ON R11 C17
Vo4
5
OFF MKK
C18
D7
CH4
C19
100
000
5
OFF
L3 P4
Transformer
6
150
GND4
6
L4
R E V. 2 . 0
Output smoothing condenser
NPN Tr
Inductor (L3)
Inductor (L4)
Schottky Barrier Diode
Board Photograph
17
MB39A102
The following subsections show the component selection methods with the following common parametric values.
2. CH1 : Output 2.5 V (Downconversion Type)
VIN (Max) = 6.0 V, Io = 250 mA, fosc = 500 kHz (1) P-ch MOS FET (MCH3309 (SANYO product) ) VDS = -20 V, VGS = 10 V, ID = -1.5 A, RDS (ON) = 340 m (Max) , Qg = 3.2 nC * Drain current: Peak value The peak drain current of this FET must be within its rated current. If the FET's peak drain current is ID, it is obtained by the following formula. VO = VIN x tON t VO = 1 x VO tON = t x VIN fOSC VIN VIN (Max) -VO x tON ID IO + 2L 6-2.5 1 0.25 + x x 0.417 500x103 2x22x10-6 0.316 A * Drain-source voltage / Gate-source voltage The source-drain and gate-source voltages of the FET should be in the rated voltage value of FET. The FET source-drain voltage (VDS) and gate-source voltage (VGS) are obtained by the following formula. VDS -VIN (Max) -6 V VGS VIN (Max) 6V (2) Schottky Barrier Diode (SBS004 (SANYO product) ) VF (forward voltage) = 0.35 V (Max) : at IF = 1 A, VRRM (repeated peak reverse voltage) = 15 V IF (mean output current) = 1 A, IFSM (surge forward current) = 10 A * Diode current: Peak value The peak diode current must be within its rated current. If the peak diode current is IFSM, it is obtained by the following formula. IFSM IO + VO x tOFF 2L 2.5 1 0.25 + x x (1-0.417) 500x103 2x22x10-6 0.316 A
18
MB39A102
* Diode current: Average value The mean value of diode current must be within its rated current. If the mean value of diode current is IF, it is obtained by the following formula. IF IO x tOFF t 0.25 x 0.583 0.146A * Repeated peak reverse voltage The repeated peak reverse voltage must be within its rated voltage. If the repeated peak reverse voltage is VRRM, it is obtained by the following formula. VRRM VIN (Max) 6V (3) Inductor (SLF12565T-220M3R5 : TDK product) 22 H (tolerance 20%) , rated current = 0.63 A The condition for L to be a continuous current within the operating voltge range is obtained by the following formula. L VIN (Max) -VO x tON 2IO 6-2.5 1 x x 0.42 2x0.25 500x103 5.88 H The load current satisfying the continuous current condition is obtained by the following formula. IO VO x tOFF 2L 2.5 1 x x (1-0.42) 500x103 2x22x10-6 66 mA * Ripple current: Peak value The peak ripple current must be within the rated current of the inductor. If the peak ripple current is IL, it is obtained by the following formula. IL IO + VIN (Max) -VO x tON 2L 6-2.5 1 0.25 + x x 0.417 500x103 2x22x10-6 0.316 A * Ripple current: Peak-to-peak value If the peak-to-peak ripple current is IL, it is obtained by the following formula. VIN (Max) -VO IL = x tON L 6-2.5 1 = x x 0.42 500x103 22x10-6 = 0.134 A : 19
MB39A102
3. CH2, CH3 : (Transformer Conversion Type)
VIN (Max) = 6 V VIN (Min) = 2.5 V VO2-1, VO3-1 = 15 V VO2-2, VO3-2 = 5 V VO2-3 = -7.5 V IO2-1, IO3-1 = 10 mA IO2-2, IO3-2 = 50 mA IO2-3 = -5 mA
(1) P-ch MOS FET (MCH3309 (SANYO product) ) VDS = -20 V, VGS = 10 V, ID = -1.5 A, RDS (ON) = 340 m (Max) , Qg = 3.2 nC The FET's rated drain current must be at least 0.7 A. The FET's rated drain-source and gate-source voltages must be at least 9 V. (2) Schottky Barrier Diode (SB05-05CP (SANYO product) ) VRRM (repeated peak reverse voltage) = 50 V, IF (average output current) = 500 mA, IFSM (surge forward current) = 5 A The each diode rated parameter must be at least VRRM (repeated peak reverse voltage) = 49 V, IF (mean output current) = 50 mA, IFSM (surge forward current) = 0.3 A.
4. CH4 : 3.3 V output (Sepic Type)
VIN (Min) = 2.5 V, IO = 500 mA, fOSC = 500 kHz (1) NPN Tr (CPH3206 (SANYO product) ) VCEO = 15 V, VCBO = 15 V, IC = 3 A, hFE = 200 (Min) * Collector current: Peak value The peak collector current of this Tr must be within its rated current. If the Tr's peak collector current is IC, it is obtained by the following formula. tON VO = VIN x tOFF VO tON = t x VIN+VO 1 VO = x fOSC VIN+VO VO+VIN (Min) 1+1 IC x IO + 1 x VIN (Min) x tON VIN (Min) 2 L3 L4 1 1 3.3+2.5 1 1 + x 0.5 + x 2.5 x x 0.69 2.5 2 10x10-6 15x10-6 500x103
(
)
(
)
1.397 A
Collector-emitter voltage / Collector-base voltage The collector-emitter and collector-base voltages of the Tr should be in the rated voltage value of Tr. The Tr's collector-emitter voltage (VCEO) and collector-base voltage (VCBO) are obtained by the following formula. VCEO = VCBO VIN (Max) + VO 6+3.3 9.3 V
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MB39A102
(2) Schottky Barrier Diode (SBS004 (SANYO product) ) VF (forward voltage) = 0.35 V (Max) : at IF = 1 A, VRRM (repeated peak reverse voltage) = 15 V IFSM (surge forward current) = 10 A, IF (mean output current) = 1 A * Diode current: Peak value The peak current of this diode must be within its rated current. If the diode's peak current is IFSM, it is obtained by the following formula. 1+1 x VO x tOFF IFSM VO+VIN (Min) x IO + 1 VIN (Min) 2 L3 L4 1 1 3.3+2.5 1 1 + x 0.5 + x 3.3 x x (1-0.569) 2.5 2 10x10-6 15x10-6 500x103
(
)
(
)
1.397 A * Diode current: Average value The mean value of diode current must be within its rated current. If the mean value of diode current is IF, it is obtained by the following formula. IF IO 0.5 A * Repeated peak reverse voltage The repeated peak reverse voltage of this diode must be within its rated voltage. If the diode's repeated peak reverse voltage is VRRM, it is obtained by the following formula. VRRM VIN (Max) +VO 6+3.3 9.3 V
(3) Inductor (L3 : RLF5018T-100MR94, TDK product) 10 H (tolerance 20%) , rated current = 0.94 A The condition for L to be a continuous current within the operating voltge range is obtained by the following formula. 2 L VIN (Max) x tON 2IOVO 62 1 x x 0.355 2x0.5x3.3 500x103 7.7H The load current satisfying the continuous current condition is obtained by the following formula. 2 IO VIN (Max) x tON 2LVO 62 1 x x 0.355 2x10x10-6x3.3 500x103 0.387 A Note : The continuous current condition becomes a large current value compared with the current value obtained by L4. 21
MB39A102
* IL current: Peak value The peak IL current of this inductor must be within its rated current. IL current is obtained by the following formula. VO x IO + VIN (Min) x tON IL VIN (Min) 2L 3.3 2.5 1 x 0.5 + x x 0.57 500x103 2.5 2x10x10-6 0.802 A
(4) Inductor (L4 : RLF5018T-150MR76, TDK product) 15 H (tolerance 20%) , rated current = 0.76 A The condition for L to be a continuous current within the operating voltge range is obtained by the following formula. L VIN (Max) x tON 2IO 6 1 x x 0.355 2x0.5 500x103 4.3H The load current satisfying the continuous current condition is obtained by the following formula. IO VIN (Max) x tON 2L 6 1 x x 0.355 500x103 2x15x10-6 0.142 A Note : The continuous current condition becomes a large current value compared with the current value obtained by L3. * IL current: Peak value The peak IL current of this inductor must be within its rated current. IL current is obtained by the following formula. IL IO + VIN (Max) x tON 2L 6 1 0.5 + x x 0.355 500x103 2x15x10-6 0.642 A
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MB39A102
s ORDERING INFORMATION
EV board part No. MB39A102EVB EVboard version No. MB39A102EV Board Rev. 2.0 Note IC Package TSSOP
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MB39A102
FUJITSU LIMITED
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.
F0301 (c) FUJITSU LIMITED Printed in Japan

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